Semiconductor device and method of manufacturing the same
US9153510B2 · kind B2 · utility
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1References
14Claims
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Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Sep 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate provided with a predetermined element and having wirings formed on its main surface connected to back wirings by a plurality of through silicon vias (TSVs), and a conductive cover which covers the main surface of the semiconductor substrate. The semiconductor substrate and the conductive cover are bonded to each other with a conductive bonding member. The TSV bonded to the conductive cover with the conductive bonding member is connected to an external electrode pad to which a ground potential is supplied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.