Apparatus and method for FinFETs
US9153582B2 · kind B2 · utility
2Cited by
11References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 14, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Apr 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.