Semiconductor device and a method for manufacturing a semiconductor device
US9153588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.