Process of forming a back side illumination image sensor
US9153621B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Sep 2, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80373
Abstract
A process of forming a back side illumination (BSI) image sensor is disclosed. An n-type implant is formed in a semiconductor substrate, and a p-type implant region, surrounding n-type in each pixel, is formed in the n-type implant such that in cross sectional view an n-type implant region is sandwiched between the two p-type implant regions. A transfer gate is formed on the semiconductor substrate such that the transfer gate entirely covers the n-type implant region and at least partially covers each of the p-type implant regions. A floating diffusion is formed in one of the p-type implant regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.