Process for forming a capacitor structure with rutile titanium oxide dielectric film
US9153640B2 · kind B2 · utility
0Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Jun 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiO2 layer on the first electrode. Subsequently, the transitional amorphous TiO2 layer is treated by oxygen plasma to transform the entire transitional amorphous TiO2 layer into a rutile TiO2 layer. Finally, a second electrode is deposited on the rutile TiO2 layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.