NAND type nonvolatile semiconductor memory device and method for manufacturing same
US9153656B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 4, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: first semiconductor regions extending in a first direction and arranged in a direction crossing the first direction; control gate electrodes provided on an upper side of the first semiconductor regions, extending in a second direction different from the first direction, and arranged in a direction crossing the second direction; a charge storage layer provided in a position each of the first semiconductor regions and each of the control gate electrodes cross; a first insulating film provided between the charge storage layer and each of the first semiconductor regions; a second insulating film provided between the charge storage layer and each of the control gate electrodes; and a silicon-containing layer in contact with part of a side wall of each of the control gate electrodes and having a gradient in a silicon concentration in a direction crossing the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.