Semiconductor device and method for fabricating the same
US9153664B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | May 23, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | May 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is provided, which includes forming a screen layer on a substrate, the screen layer including a first portion doped with a first type impurity, forming a first undoped semiconductor layer on the screen layer, forming a gate structure on the first semiconductor layer, forming a first amorphous region on both sides of the gate structure in the first semiconductor layer, and re-crystallizing the first amorphous region through performing a first heat treatment of the first amorphous region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.