Insulated gate bipolar transistor

US9153676B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Maxi Andenna · Fislisbach, CH
• Chiara Corvasce · Bergdietikon, CH
• Arnost Kopta · Zürich, CH

Key dates

• Filing date: Jan 14, 2014
• Grant date: Oct 6, 2015
• Expiry date: Apr 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first and second trench gate electrodes. The first trench gate electrodes are separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel is formable between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrodes. An enhancement layer separates the base layer from the drift layer. The second trench gate electrode is separated from the base layer, the enhancement layer and the drift layer by a third insulating layer.