Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
US9156682B2 · kind B2 · utility
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18References
23Claims
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Key dates
| Filing date | May 25, 2012 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Jun 18, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24521
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.