Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same
US9158204B2 · kind B2 · utility
0Cited by
7References
16Claims
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Key dates
| Filing date | Aug 8, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0206
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.