Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
US9159553B2 · kind B2 · utility
1Cited by
6References
21Claims
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Key dates
| Filing date | Aug 23, 2010 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Jun 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.