Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si
US9159554B2 · kind B2 · utility
5Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.