Integrated circuits with close electrical contacts and methods for fabricating the same

US9159661B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kai Frohberg · Meißen, DE
• Peter Moll · Dresden, DE
• Heike Scholz · Darmstadt, DE

Key dates

• Filing date: Nov 19, 2013
• Grant date: Oct 13, 2015
• Expiry date: Nov 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the etch mask is removed from over a recess mid-point. A center contact is formed in the interlayer dielectric at the recess mid-point.