Copper wire and dielectric with air gaps
US9159671B2 · kind B2 · utility
3Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Nov 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.