Methods of forming semiconductor device structures
US9159677B2 · kind B2 · utility
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4References
19Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.