Semiconductor device comprising an diode region and an IGBT region
US9159721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2015 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A technology for inhibiting gate interference in an RC-IGBT employing a diode structure having Schottky connections is provided. A semiconductor device includes a semiconductor substrate including a diode region and an IGBT region. In this semiconductor device, the diode region includes: a p-type anode region connected to an anode electrode by an Ohmic contact; a plurality of n-type pillar regions connected to the anode electrode by Schottky contacts; an n-type barrier region; an n-type diode drift region; and an n-type cathode region. An on-resistance of a first pillar region with respect to the anode electrode is higher than an on-resistance of a second pillar region with respect to the anode electrode. The second pillar region is located at a position close to the IGBT region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.