Heterojunction bipolar transistors with an airgap between the extrinsic base and collector

US9159817B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Renata Camillo-Castillo · South Burlington, US
• Vibhor Jain · Williston, US
• Vikas K. Kaushal · South Burlington, US
• Marwan H. Khater · New York, US
• Anthony K. Stamper · Williston, US

Key dates

• Filing date: Nov 19, 2013
• Grant date: Oct 13, 2015
• Expiry date: Nov 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A collector is formed in a semiconductor substrate, an intrinsic base is formed on the semiconductor substrate, and an extrinsic base is formed on the intrinsic base. An airgap is located vertically between the extrinsic base and the collector. A contact surface is located adjacent to the airgap. The contact surface is coupled with the collector. A spacer is located laterally between the airgap and the subcollector contact surface.