Patent · US Active

Method for singulating hybrid integrated photonic chips

US9159861B2 · kind B2 · utility

16Cited by
0References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 21, 2013
Grant dateOct 13, 2015
Priority date
Expiry dateFeb 3, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F71/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

During a fabrication technique, trenches are defined partially through the thickness of a substrate. Then, photonic integrated circuits are coupled to the substrate. These photonic integrated circuits may be in a diving-board configuration, so that they at least partially overlap the trenches. While this may preclude the use of existing dicing techniques, individual hybrid integrated photonic chips (which each include a portion of the substrate and at least one of the photonic integrated circuits) may be singulated from the substrate by: coupling a carrier to a front surface of the substrate; thinning the substrate from a back surface until the partial trenches are reached (for example, by grinding the substrate); attaching a support mechanism (such as tape) to the back surface of the substrate; removing the carrier; and then removing the support mechanism.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.