Patent · US Active

Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches

US9160328B2 · kind B2 · utility

19Cited by

25References

13Claims

0Family size

Inventors

Fikret Altunkilic · North Andover, US
Guillaume Alexandre Blin · Carlisle, US
Haki Cebi · Woburn, US
Hanching Fuh · Brookline, US
Mengshu Hsu · Bedford, US
Jong-Hoon Lee · Suwon-si, KR
Anuj Madan · Atlanta, US
Nuttapong Srirattana · Billerica, US
Chuming Shih · Chandler, US
Steven C. Sprinkle · Hampstead, US

Key dates

Filing date	Jul 6, 2013
Grant date	Oct 13, 2015
Priority date	—
Expiry date	Jul 6, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0018
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.