Patent · US Active

Overlay metrology method

US9164398B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 14, 2014
Grant dateOct 20, 2015
Priority date
Expiry dateApr 14, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01B2210/56
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.