Semiconductor device and method of manufacturing the same
US9165774B2 · kind B2 · utility
9Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of transistors formed over a substrate, a support body including a horizontal portion and protrusions, wherein the horizontal portion covers at least one of the transistors, and the protrusions are formed over the horizontal portion and located between the transistors, and conductive layers and insulating layers alternately stacked over the support body and protruding upwardly along the sidewalls of the protrusions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.