Flat SiC semiconductor substrate
US9165779B2 · kind B2 · utility
9Cited by
48References
14Claims
0Family size
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Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.