Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same
US9165817B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Dec 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.