Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device

US9165828B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gabriele Bettineschi · Munich, DE
• Uwe Seidel · Munich, DE
• Wolfgang Walter · Heidelberg, DE
• Michael Schrenk · Dießen am Ammersee, DE
• Hubert Werthmann · Birkenfeld, DE

Key dates

• Filing date: Jan 13, 2014
• Grant date: Oct 20, 2015
• Expiry date: Jan 13, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/13
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.