Plasma protection diode for a HEMT device
US9165839B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Aug 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a silicon substrate. A first III-V compound layer is disposed over the silicon substrate. A second III-V compound layer is disposed over the first III-V compound layer. The semiconductor device includes a transistor disposed over the first III-V compound layer and partially in the second III-V compound layer. The semiconductor device includes a diode disposed in the silicon substrate. The semiconductor device includes a via coupled to the diode and extending through at least the first III-V compound layer. The via is electrically coupled to the transistor or disposed adjacent to the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.