Semiconductor device contacts
US9166004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jan 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulating layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.