Michael Haverty
15Patents
2h-index
30Co-inventors
50Inventor score
Filing activity: Feb 26, 2008 → May 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8779589B2 | Liner layers for metal interconnects | Electricity | 6 | Active |
| US10483385B2 | Nanowire structures having wrap-around contacts | Electricity | 3 | Active |
| US11658025B2 | Chalcogen precursors for deposition of silicon nitride | Electricity | 1 | Active |
| US11702733B2 | Methods for depositing blocking layers on conductive surfaces | Electricity | 0 | Active |
| US12281382B2 | Methods for depositing blocking layers on conductive surfaces | Electricity | 0 | Active |
| US9577057B2 | Semiconductor device contacts | Electricity | 0 | Active |
| US10840366B2 | Nanowire structures having wrap-around contacts | Electricity | 0 | Active |
| US8633534B2 | Transistor channel mobility using alternate gate dielectric materials | Electricity | 0 | Active |
| US11821070B2 | Ruthenium film deposition using low valent metal precursors | Chemistry; Metallurgy | 0 | Active |
| US11757026B2 | Nanowire structures having wrap-around contacts | Electricity | 0 | Active |
| US9166004B2 | Semiconductor device contacts | Electricity | 0 | Active |
| US8154121B2 | Polymer interlayer dielectric and passivation materials for a microelectronic device | Electricity | 0 | Active |
| US12141688B2 | Crested barrier device and synaptic element | Electricity | 0 | Active |
| US12142477B2 | Chalcogen precursors for deposition of silicon nitride | Electricity | 0 | Active |
| US11626288B2 | Integrated contact silicide with tunable work functions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.