SiC single crystal, SiC wafer, and semiconductor device
US9166008B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | May 16, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | May 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SiC single crystal having at least one orientation region where a basal plane dislocation has a high linearity and is oriented to three crystallographically-equivalent <11-20> directions, and an SiC wafer and a semiconductor device which are manufactured from the SiC single crystal. The SiC single crystal can be manufactured by using a seed crystal in which the offset angle on a {0001} plane uppermost part side is small and the offset angle on an offset direction downstream side is large and growing another crystal on the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.