Semiconductor memory devices including an air gap and methods of fabricating the same
US9166012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor memory device and a method of fabricating the same, the semiconductor memory device may include a semiconductor substrate with a first trench defining active regions in a first region and a second trench provided in a second region around the first region, a gate electrode provided on the first region to cross the active regions, a charge storing pattern disposed between the gate electrode and the active regions, a blocking insulating layer provided between the gate electrode and the charge storing pattern and extending over the first trench to define a first air gap in the first trench, and an insulating pattern provided spaced apart from a bottom surface of the second trench to define a second air gap in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.