FinFET device including a stepped profile structure
US9166053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Apr 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device and a method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a substrate including a fin structure, the fin structure including a first and a second fin. The FinFET device further includes a shallow trench isolation (STI) feature disposed on the substrate and between the first and the second fins. The FinFET device further includes a gate dielectric disposed on the first and the second fins. The FinFET device further includes a gate structure disposed on the gate dielectric. The gate structure traverses the first fin, the second fin, and the STI feature between the first fin and the second fin and has a longitudinal stepped profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.