Semiconductor device having the bottom gate type transistor formed in a wiring layer
US9166057B2 · kind B2 · utility
0Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention makes it possible to increase the selectivity of a gate insulation film in an active element formed in a wiring layer.A semiconductor device according to the present invention has a bottom gate type transistor using an antireflection film formed over an Al wire in a wiring layer as a gate wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.