Field effect transistor using graphene
US9166062B2 · kind B2 · utility
2Cited by
2References
4Claims
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Key dates
| Filing date | Apr 22, 2015 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.