Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure
US9166109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.