Magnetic devices having perpendicular magnetic tunnel junction
US9166144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Nov 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.