Patent · US Active

Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof

US9169548B1 · kind B1 · utility

2Cited by

50References

15Claims

0Family size

Assignee

APOLLO PRECISION FUJIAN LIMITED · CN

Inventors

John Corson · Stanford, US
Alex Austin · Santa Clara, US
Ron Rulkens · Milpitas, US
Jochen Titus · Sunnyvale, US
Robert Tas · Aromas, US
Paul Shufflebotham · San Jose, US
Daniel R. Juliano · Santa Clara, US
Neil Mackie · Fremont, US

Key dates

Filing date	Oct 19, 2010
Grant date	Oct 27, 2015
Priority date	—
Expiry date	Sep 3, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)≦0.3, and where the content is measured in atomic percent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.