Micromechanical substrate for a diaphragm with a diffusion barrier layer

US9170226B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Maximilian Fleischer · Ehrenkirchen, DE
• Oliver Freudenberg · Birkenfeld, DE
• Harry Hedler · Germering, DE
• Markus Schieber · Munich, DE
• Manfred Schreiner · Gauting, DE
• Karl Weidner · Birkenfeld, DE
• Kerstin Wiesner · Putzbrunn, DE
• Jörg Zapf · Munich, DE

Key dates

• Filing date: May 23, 2011
• Grant date: Oct 27, 2015
• Expiry date: Sep 13, 2031

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2203/0127
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.