Patent · US Active

Semiconductor device defect monitoring using a plurality of temperature sensing devices in an adjacent semiconductor device

US9170296B2 · kind B2 · utility

3Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2013
Grant dateOct 27, 2015
Priority date
Expiry dateFeb 4, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/303
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An arrangement of semiconductor devices to monitor semiconductor defects. There is a first semiconductor device arranged in proximity to a second semiconductor device, the second semiconductor device having a plurality of temperature sensing devices at locations in the second semiconductor device; a plurality of through silicon vias extending between the first semiconductor device and the second semiconductor device to electrically connect the first semiconductor device to the second semiconductor device; and a testing program to cause the plurality of temperature sensing devices in the second semiconductor device to sense the temperature at a plurality of corresponding locations in the first semiconductor device such that a predetermined rise in temperature at one location of the plurality of temperature sensing devices in the second semiconductor device is indicative of a defect in the corresponding location in the first semiconductor device. Methods of monitoring defects are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.