Method, structure, and design structure for a through-silicon-via Wilkinson power divider
US9171121B2 · kind B2 · utility
12Cited by
7References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Apr 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.