Memristors with asymmetric electrodes
US9171613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2009 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.