Patent · US Active

Semiconductor device and method for manufacturing a semiconductor device

US9171777B2 · kind B2 · utility

1Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Zundel · Egmating, DE
Vanessa Capodieci · Munich, DE
Markus Dinkel · Unterhaching, DE
Uwe Schmalzbauer · Neubiberg, DE

Key dates

Filing date	Jan 29, 2013
Grant date	Oct 27, 2015
Priority date	—
Expiry date	Mar 30, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.