Method of fabricating semiconductor device and device fabricated thereby
US9171853B2 · kind B2 · utility
1Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of lines disposed on a semiconductor substrate, and remaining line patterns disposed spaced apart from the lines on extensions from the lines. The lines include first end-portions adjacent to the remaining line patterns. The remaining line patterns include second end-portions adjacent to the lines. The first end-portions and second end-portions are formed to have mirror symmetry with respect to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.