Multi-gate devices with replaced-channels and methods for forming the same
US9171925B2 · kind B2 · utility
37Cited by
18References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor substrate, isolation regions in the semiconductor substrate, and a Fin Field-Effect Transistor (FinFET). The FinFET includes a channel region over the semiconductor substrate, a gate dielectric on a top surface and sidewalls of the channel region, a gate electrode over the gate dielectric, a source/drain region, and an additional semiconductor region between the source/drain region and the channel region. The channel region and the additional semiconductor region are formed of different semiconductor materials, and are at substantially level with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.