System and method for decomposition of a single photoresist mask pattern into 3 photoresist mask patterns
US9176373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method of decomposing a single photoresist mask pattern to three photoresist mask patterns. The system and method assign nodes to polygon features on the single photoresist mask pattern, designate nodes as being adjacent nodes for those nodes that are less than a predetermined distance apart, iteratively remove nodes having 2 or less adjacent nodes until no nodes having 2 or less adjacent nodes remain, identify one or more internal nodes, map photoresist mask pattern designations (colors) to the internal nodes, and replace and map a color to each of the nodes removed by the temporarily removing nodes, such that each node does not have an adjacent node of the same color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.