System and method for reducing contamination in extreme ultraviolet lithography light source
US9176400B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 1, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Various embodiments provide systems and methods for extreme ultraviolet (EUV) lithography light source. An exemplary system can include a laser radiation apparatus configured to provide laser radiation. The system can further include an EUV light excitation source material configured to receive the laser radiation to generate an EUV light. The laser radiation can generate droplets from the EUV light excitation source material. The system can further include a collector configured to collect the EUV light. The collector can include a plurality of reflective mirrors surrounding the EUV light excitation source material. The plurality of reflective mirrors can be movable. The collector can further include a mirror control system synchronized with the laser radiation apparatus and configured to set the plurality of reflective mirrors to be in one of a reflective state for reflecting the EUV light and a non-reflective state for preventing contamination by the droplets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.