Crossbar RRAM array radiation hardened application
US9177642B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/51
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a non-memory device comprising a plurality of resistive switching device. Each of the plurality of resistive switching device includes a resistive switching material characterized by a resistance characterized by a state depending on a conductive filament structure. A first programming code file to configure a system to perform a predetermined task is provided. The programmability of each of the plurality of resistive switching device is maintained. The system receives the first programming code file, executing the first programming code file, and verifies and validates that the system performs the predetermined task. Once the first programming code file is validated, the conductive filament in one or more resistive switching device is fixed spatially in a portion of the resistive switching material of the respective one or more resistive switching device by applying joule heating programming. The programmability of each of the memory device is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.