TEM sample preparation
US9177760B2 · kind B2 · utility
1Cited by
11References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.