System and method for mitigating oxide growth in a gate dielectric
US9177806B2 · kind B2 · utility
6Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.