Method of manufacturing low resistivity contacts on n-type germanium
US9177812B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28525
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for manufacturing semiconductor devices and the devices thus obtained. In one embodiment, the method comprises obtaining a semiconductor substrate comprising a germanium region doped with n-type dopants at a first doping level and forming an interfacial silicon layer overlying the germanium region, where the interfacial silicon layer is doped with n-type dopants at a second doping level and has a thickness higher than a critical thickness of silicon on germanium, such that the interfacial layer is at least partially relaxed. The method further includes forming over the interfacial silicon layer a layer of material having an electrical resistivity smaller than 1×10−2 Ωcm, thereby forming an electrical contact between the germanium region and the layer of material, wherein the electrical contact has a specific contact resistivity below 10−4 Ωcm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.