Tungsten gates for non-planar transistors
US9177867B2 · kind B2 · utility
7Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2011 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.