Bidirectional trench FET with gate-based resurf
US9178027B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
A device includes a semiconductor substrate having a surface, a trench in the semiconductor substrate extending vertically from the surface, a body region laterally adjacent the trench, spaced from the surface, having a first conductivity type, and in which a channel is formed during operation, a drift region between the body region and the surface, and having a second conductivity type, a gate structure disposed in the trench alongside the body region, recessed from the surface, and configured to receive a control voltage is applied to control formation of the channel, and a gate dielectric layer disposed along a sidewall of the trench between the gate structure and the body region. The gate structure and the gate dielectric layer have a substantial vertical overlap with the drift region such that electric field magnitudes in the drift region are reduced through application of the control voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.